Invited Speakers

Plenary Speaker

  • Hideo Hosono (Tokyo Institute of Technology, Japan)
    Title: “Exploring Novel Materials for Electronic Applications”

Tutorial Speaker

  • Jun Suda (Kyoto University, Japan)
    Title: “Fundamentals of Wide-band-gap Semiconductor Power Devices
         – Important Technologies to Realize Ideal Power Devices -“

Invited Speakers

  • Zbigniew Galazka (Leibniz Institute for Crystal Growth, Germany)
    Title: “Bulk Growth and Properties of High Quality beta-Ga2O3 , In2O3 and SnO2 Single Crystals”
  • Masaya Oda (FLOSFIA, Japan)
    Title: “Mist Epitaxy Growth of α-Ga2O3 and Its Power Device Application”
  • Jim Speck (University of California Santa Barbara, U.S.A.)
    Title: “Progress in PAMBE Growth of β-Ga2O3
  • Filip Tuomisto (Aalto University, Finland)
    Title: “Vacancy Defects in SnO2, In2O3, and Ga2O3 Studied with Positron Annihilation Spectroscopy”
  • Joel B. Varley (Lawrence Livermore National Laboratory, U.S.A.)
    Title: “Understanding the Electronic and Optical Properties of β-Ga2O3
  • Holger von Wenckstern (Universit├Ąt Leipzig, Germany)
    Title: “Growth and Investigation of Group-III Sesquioxides and Fabrication of Basic Devices Thereon”