Plenary Speaker

• Hideo Hosono (Tokyo Institute of Technology, Japan)
  Title: “Exploring Novel Materials for Electronic Applications”

Tutorial Speaker

• Jun Suda (Kyoto University, Japan)
  Title: “Fundamentals of Wide-band-gap Semiconductor Power Devices
       – Important Technologies to Realize Ideal Power Devices -“

Invited Speakers

• Zbigniew Galazka (Leibniz Institute for Crystal Growth, Germany)
  Title: “Bulk Growth and Properties of High Quality beta-Ga₂O₃ , In₂O₃ and SnO₂ Single Crystals”
• Masaya Oda (FLOSFIA, Japan)
  Title: “Mist Epitaxy Growth of α-Ga₂O₃ and Its Power Device Application”
• Jim Speck (University of California Santa Barbara, U.S.A.)
  Title: “Progress in PAMBE Growth of β-Ga₂O₃“
• Filip Tuomisto (Aalto University, Finland)
  Title: “Vacancy Defects in SnO₂, In₂O₃, and Ga₂O₃ Studied with Positron Annihilation Spectroscopy”
• Joel B. Varley (Lawrence Livermore National Laboratory, U.S.A.)
  Title: “Understanding the Electronic and Optical Properties of β-Ga₂O₃“
• Holger von Wenckstern (Universität Leipzig, Germany)
  Title: “Growth and Investigation of Group-III Sesquioxides and Fabrication of Basic Devices Thereon”